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Abstract N‐Type thermoelectrics typically consist of small molecule dopant+polymer host. Only a few polymer dopant+polymer host systems have been reported, and these have lower thermoelectric parameters. N‐type polymers with high crystallinity and order are generally used for high‐conductivity () organic conductors. Few n‐type polymers with only short‐range lamellar stacking for high‐conductivity materials have been reported. Here, we describe an n‐type short‐range lamellar‐stacked all‐polymer thermoelectric system with highestof 78 S⁻¹, power factor (PF) of 163 μW m⁻¹ K⁻², and maximum Figure of merit (ZT) of 0.53 at room temperature with a dopant/host ratio of 75 wt%. The minor effect of polymer dopant on the molecular arrangement of conjugated polymer PDPIN at high ratios, high doping capability, high Seebeck coefficient (S) absolute values relative to, and atypical decreased thermal conductivity () with increased doping ratio contribute to the promising performance. 

Abstract A novel n‐type copolymer dopant polystyrene–poly(4‐vinyl‐N‐hexylpyridinium fluoride) (PSpF) with fluoride anions is designed and synthesized by reversible addition–fragmentation chain transfer (RAFT) polymerization. This is thought to be the first polymeric fluoride dopant. Electrical conductivity of 4.2 S cm^–1and high power factor of 67 µW m^–1K^–2are achieved for PSpF‐doped polymer films, with a corresponding decrease in thermal conductivity as the PSpF concentration is increased, giving the highest ZT of 0.1. An especially high electrical conductivity of 58 S cm^–1at 88 °C and outstanding thermal stability are recorded. Further, organic transistors of PSpF‐doped thin films exhibit high electron mobility and Hall mobility of 0.86 and 1.70 cm²V^–1s^–1, respectively. The results suggest that polystyrene–poly(vinylpyridinium) salt copolymers with fluoride anions are promising for high‐performance n‐type all‐polymer thermoelectrics. This work provides a new way to realize organic thermoelectrics with high conductivity relative to the Seebeck coefficient, high power factor, thermal stability, and broad processing window.